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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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NSVMMBTH10LT1G
NSVMMBTH10LT1G
RF BJT NSVMMBTH10LT1G
onsemi
NSVMMBTH10LT1G
--
Diodes, Transistors and Thyristors
RF BJT
NSVMMBTH10LT1G.pdf
Specification
Product AttributeAttribute Value
PPAPYes
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveYes
Lead ShapeGull-wing
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width1.3
Package Height0.94
Package Length2.9
Supplier PackageSOT-23
Standard Package NameSOT
Minimum DC Current Gain60@4A@10V
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Minimum DC Current Gain Range50 to 120
Maximum Power Dissipation (mW)300
Typical Output Capacitance (pF)0.7(Max)
Maximum Emitter Base Voltage (V)3
Maximum Collector Base Voltage (V)30
Maximum Transition Frequency (MHz)650(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Emitter Cut-Off Current (nA)100
Maximum Collector-Emitter Voltage (V)25
Maximum Collector Cut-Off Current (nA)100
Maximum Collector-Emitter Voltage Range (V)20 to 30
Maximum Junction Ambient Thermal Resistance556°C/W
Maximum Collector-Emitter Saturation Voltage (V)0.5@0.4mA@4mA
Description
Trans RF BJT NPN 25V 300mW Automotive 3-Pin SOT-23 T/R
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