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BFG135,115-RP50*3902446
BFG135,115-RP50*3902446
RF BJT BFG135,115-RP50*3902446
NXP
BFG135,115-RP50*3902446
--
Diodes, Transistors and Thyristors
RF BJT
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
ConfigurationSingle Dual Emitter
Package Width3.7(Max)
Package Height1.7(Max)
Package Length6.7(Max)
Supplier PackageSC-73
Standard Package NameSC
Minimum DC Current Gain80@100mA@10V
Typical Power Gain (dB)16
Number of Elements per Chip1
Operational Bias Conditions10V/100mA
Minimum DC Current Gain Range50 to 120
Maximum Power Dissipation (mW)1000
Typical Output Capacitance (pF)2
Maximum DC Collector Current (A)0.15
Maximum Emitter Base Voltage (V)2
Maximum Collector Base Voltage (V)25
Maximum Transition Frequency (MHz)7000(Typ)
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-65
Maximum Emitter Cut-Off Current (nA)1000
Maximum Collector-Emitter Voltage (V)15
Maximum Collector Cut-Off Current (nA)1000
Maximum DC Collector Current Range (A)0.12 to 0.5
Maximum Collector-Emitter Voltage Range (V)<20
Description
Trans RF BJT NPN 15V 0.15A 1000mW 4-Pin(3+Tab) SC-73 T/R
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