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RF BJT BFP 650F H6327
Infineon
BFP 650F H6327
--
Diodes, Transistors and Thyristors
RF BJT
Specification
| Product Attribute | Attribute Value |
| PPAP | Unknown |
| Type | NPN |
| EU RoHS | Compliant |
| Material | SiGe |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 4 |
| Automotive | Yes |
| PCB changed | 4 |
| Part Status | Active |
| Configuration | Single Dual Emitter |
| Package Width | 0.8 |
| Package Height | 0.55 |
| Package Length | 1.4 |
| Supplier Package | TSFP |
| Minimum DC Current Gain | 110@80mA@3V |
| Typical Power Gain (dB) | 21.5 |
| Maximum Noise Figure (dB) | 1.9(Min) |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Operational Bias Conditions | 3V/80mA |
| Minimum DC Current Gain Range | 50 to 120 |
| Maximum Power Dissipation (mW) | 500 |
| Typical Input Capacitance (pF) | 1.3 |
| Typical Output Capacitance (pF) | 0.26 |
| Maximum DC Collector Current (A) | 0.15 |
| Maximum Emitter Base Voltage (V) | 1.2 |
| Maximum Collector Base Voltage (V) | 13 |
| Maximum Transition Frequency (MHz) | 42000(Typ) |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power 1dB Compression (dBm) | 17.5(Typ) |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Emitter Cut-Off Current (nA) | 10000 |
| Maximum Collector-Emitter Voltage (V) | 4 |
| Maximum Collector Cut-Off Current (nA) | 100 |
| Maximum DC Collector Current Range (A) | 0.12 to 0.5 |
| Maximum 3rd Order Intercept Point (dBm) | 31(Typ) |
| Maximum Collector-Emitter Voltage Range (V) | <20 |
| Description |
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