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BFP 540FESD H6327
BFP 540FESD H6327
RF BJT BFP 540FESD H6327
Infineon
BFP 540FESD H6327
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Diodes, Transistors and Thyristors
RF BJT
Specification
Product AttributeAttribute Value
PPAPUnknown
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveYes
Lead ShapeFlat
PCB changed4
Part StatusUnconfirmed
ConfigurationSingle Dual Emitter
Package Width0.8
Package Height0.55
Package Length1.4
Supplier PackageTSFP
Standard Package NameTSFP
Minimum DC Current Gain50@20mA@3.5V
Typical Power Gain (dB)20
Maximum Noise Figure (dB)1.4(Min)
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Operational Bias Conditions2V/20mA
Minimum DC Current Gain Range50 to 120
Maximum Power Dissipation (mW)250
Typical Input Capacitance (pF)0.55
Typical Output Capacitance (pF)0.16
Maximum DC Collector Current (A)0.08
Maximum Emitter Base Voltage (V)1
Maximum Collector Base Voltage (V)10
Maximum Transition Frequency (MHz)30000(Typ)
Maximum Operating Temperature (°C)150
Maximum Power 1dB Compression (dBm)11(Typ)
Minimum Operating Temperature (°C)-55
Maximum Emitter Cut-Off Current (nA)10000
Maximum Collector-Emitter Voltage (V)4.5
Maximum Collector Cut-Off Current (nA)100
Maximum DC Collector Current Range (A)0.06 to 0.12
Maximum 3rd Order Intercept Point (dBm)24.5(Typ)
Maximum Collector-Emitter Voltage Range (V)<20
Description
Trans RF BJT NPN 4.5V 0.08A 250mW Automotive 4-Pin TSFP T/R
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