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BFP 740 E6327
BFP 740 E6327
RF BJT BFP 740 E6327
Infineon
BFP 740 E6327
--
Diodes, Transistors and Thyristors
RF BJT
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
TypeNPN
EU RoHSCompliant
MaterialSiGe
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveYes
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
ConfigurationSingle Dual Emitter
Package Width1.25
Package Height0.9(Max)
Package Length2
Supplier PackageSOT-343
Standard Package NameSOT-343
Minimum DC Current Gain160@25mA@3V
Typical Power Gain (dB)31.5
Maximum Noise Figure (dB)0.85(Typ)
Supplier Temperature GradeIndustrial
Number of Elements per Chip1
Operational Bias Conditions3V/15mA
Minimum DC Current Gain Range120 to 200
Maximum Power Dissipation (mW)160
Typical Input Capacitance (pF)0.45
Typical Output Capacitance (pF)0.08
Maximum DC Collector Current (A)0.045
Maximum Emitter Base Voltage (V)1.2
Maximum Collector Base Voltage (V)13
Maximum Transition Frequency (MHz)44000(Typ)
Maximum Operating Temperature (°C)150
Maximum Power 1dB Compression (dBm)9(Typ)
Minimum Operating Temperature (°C)-65
Maximum Emitter Cut-Off Current (nA)40
Maximum Collector-Emitter Voltage (V)4
Maximum Collector Cut-Off Current (nA)40
Maximum DC Collector Current Range (A)0.001 to 0.06
Maximum 3rd Order Intercept Point (dBm)25.5(Typ)
Maximum Collector-Emitter Voltage Range (V)<20
Description
Trans RF BJT NPN 4V 0.045A 160mW Automotive 4-Pin(3+Tab) SOT-343 T/R
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