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BFP450E6327T
BFP450E6327T
RF BJT BFP450E6327T
Infineon
BFP450E6327T
--
Diodes, Transistors and Thyristors
RF BJT
BFP450E6327T.pdf
Specification
Product AttributeAttribute Value
TypeNPN
EU RoHSCompliant
MaterialSi
ECCN (US)EAR99
PackagingTape and Reel
Part StatusObsolete
ConfigurationSingle Dual Emitter
Minimum DC Current Gain60@50mA@4V|50@90mA@3V
Typical Power Gain (dB)35.5
Maximum Noise Figure (dB)32(Typ)
Number of Elements per Chip1
Operational Bias Conditions3V/90mA
Minimum DC Current Gain Range50 to 120
Maximum Power Dissipation (mW)500
Typical Input Capacitance (pF)1.2
Typical Output Capacitance (pF)0.48
Maximum DC Collector Current (A)0.17
Maximum Emitter Base Voltage (V)1.5
Maximum Collector Base Voltage (V)15
Maximum Transition Frequency (MHz)24000(Typ)
Maximum Operating Temperature (°C)150
Maximum Power 1dB Compression (dBm)19(Typ)
Minimum Operating Temperature (°C)-55
Maximum Emitter Cut-Off Current (nA)3000
Maximum Collector-Emitter Voltage (V)4.5
Maximum Collector Cut-Off Current (nA)30
Maximum DC Collector Current Range (A)0.12 to 0.5
Maximum 3rd Order Intercept Point (dBm)31(Typ)
Maximum Collector-Emitter Voltage Range (V)<20
Description
Trans RF BJT NPN 4.5V 0.17A Automotive 4-Pin(3+Tab) SOT-343 T/R
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