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BFQ81-GS08
BFQ81-GS08
RF BJT BFQ81-GS08
Vishay
BFQ81-GS08
--
Diodes, Transistors and Thyristors
RF BJT
BFQ81-GS08.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width1.43(Max)
Package Height1.05(Max)
Package Length3.1(Max)
Supplier PackageSOT-23
Standard Package NameSOT
Minimum DC Current Gain70@5mA@10V|70@15mA@10V
Typical Power Gain (dB)15
Maximum Noise Figure (dB)2.5(Typ)
Number of Elements per Chip1
Operational Bias Conditions10V/25mA
Minimum DC Current Gain Range50 to 120
Maximum Power Dissipation (mW)200
Typical Input Capacitance (pF)1.1
Typical Output Capacitance (pF)0.35
Maximum DC Collector Current (A)0.03
Maximum Emitter Base Voltage (V)2
Maximum Collector Base Voltage (V)25
Maximum Transition Frequency (MHz)5800(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Emitter Cut-Off Current (nA)10000
Maximum Collector-Emitter Voltage (V)16
Maximum Collector Cut-Off Current (nA)100
Maximum DC Collector Current Range (A)0.001 to 0.06
Maximum 3rd Order Intercept Point (dBm)27(Typ)
Maximum Collector-Emitter Voltage Range (V)<20
Maximum Junction Ambient Thermal Resistance450K/W
Maximum Collector-Emitter Saturation Voltage (V)0.5@3mA@30mA
Description
Trans RF BJT NPN 16V 0.03A 3-Pin SOT-23 T/R
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