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BFR 843EL3 E6327
BFR 843EL3 E6327
RF BJT BFR 843EL3 E6327
Infineon
BFR 843EL3 E6327
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Diodes, Transistors and Thyristors
RF BJT
Specification
Product AttributeAttribute Value
PPAPUnknown
TypeNPN
EU RoHSCompliant
MaterialSiGe
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width1
Package Height0.3(Max)
Package Length0.6
Supplier PackageTSLP
Minimum DC Current Gain230@1mA@1.8V
Typical Power Gain (dB)25.5
Maximum Noise Figure (dB)1.35(Min)
Number of Elements per Chip1
Operational Bias Conditions1.8V/15mA
Minimum DC Current Gain Range200 to 300
Maximum Power Dissipation (mW)125
Typical Input Capacitance (pF)0.66
Typical Output Capacitance (pF)5.26
Maximum DC Collector Current (A)0.055
Maximum Collector Base Voltage (V)2.9
Maximum Operating Temperature (°C)150
Maximum Power 1dB Compression (dBm)7.5
Minimum Operating Temperature (°C)-55
Maximum Emitter Cut-Off Current (nA)10000
Maximum Collector-Emitter Voltage (V)2.25
Maximum Collector Cut-Off Current (nA)400
Maximum DC Collector Current Range (A)0.001 to 0.06
Maximum 3rd Order Intercept Point (dBm)23(Typ)
Maximum Collector-Emitter Voltage Range (V)<20
Description
Trans RF BJT NPN 2.25V 0.055A 125mW Automotive 3-Pin TSLP T/R
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