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BFR183WH6327XTSA1
BFR183WH6327XTSA1
RF BJT BFR183WH6327XTSA1
Infineon
BFR183WH6327XTSA1
--
Diodes, Transistors and Thyristors
RF BJT
Specification
Product AttributeAttribute Value
PPAPUnknown
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width1.25
Package Height0.9(Max)
Package Length2
Supplier PackageSOT-323
Standard Package NameSOT-323
Minimum DC Current Gain70@15mA@8V
Typical Power Gain (dB)18.5
Maximum Noise Figure (dB)1.4(Typ)
Number of Elements per Chip1
Operational Bias Conditions8V/15mA
Minimum DC Current Gain Range50 to 120
Maximum Power Dissipation (mW)450
Maximum DC Collector Current (A)0.065
Maximum Emitter Base Voltage (V)2
Maximum Collector Base Voltage (V)20
Maximum Transition Frequency (MHz)8000(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Emitter Cut-Off Current (nA)1000
Maximum Collector-Emitter Voltage (V)12
Maximum Collector Cut-Off Current (nA)100
Maximum DC Collector Current Range (A)0.06 to 0.12
Maximum Collector-Emitter Voltage Range (V)<20
Description
Trans RF BJT NPN 12V 0.065A Automotive 3-Pin SOT-323 T/R
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