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BFT25,215
BFT25,215
RF BJT BFT25,215
NXP
BFT25,215
--
Diodes, Transistors and Thyristors
RF BJT
BFT25,215.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width1.4(Max)
Package Height1(Max)
Package Length3(Max)
Supplier PackageTO-236AB
Standard Package NameSOT-23
Minimum DC Current Gain20@10uA@1V|20@1mA@1V
Typical Power Gain (dB)18
Maximum Noise Figure (dB)5.5(Typ)
Number of Elements per Chip1
Operational Bias Conditions1V/1mA
Minimum DC Current Gain Range2 to 30
Maximum Power Dissipation (mW)30
Maximum DC Collector Current (A)0.0065
Maximum Emitter Base Voltage (V)2
Maximum Collector Base Voltage (V)8
Maximum Transition Frequency (MHz)2300(Typ)
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)5
Maximum Collector Cut-Off Current (nA)50
Maximum DC Collector Current Range (A)0.001 to 0.06
Maximum Collector-Emitter Voltage Range (V)<20
Description
Trans RF BJT NPN 5V 0.0065A 30mW 3-Pin TO-236AB T/R
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