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BFU725F,115
BFU725F,115
RF BJT BFU725F,115
NXP
BFU725F,115
--
Diodes, Transistors and Thyristors
RF BJT
BFU725F,115.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSiGe
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
PCB changed3
Part StatusObsolete
ConfigurationSingle Dual Emitter
Package Width1.35(Max)
Package Height0.75(Max)
Package Length2.2(Max)
Supplier PackageDFP
Minimum DC Current Gain300@10mA@2V
Typical Power Gain (dB)28
Maximum Noise Figure (dB)1.1(Typ)
Number of Elements per Chip1
Operational Bias Conditions2V/25mA
Minimum DC Current Gain Range300 to 500
Maximum Power Dissipation (mW)136
Typical Input Capacitance (pF)0.342
Typical Output Capacitance (pF)0.07
Maximum DC Collector Current (A)0.04
Maximum Emitter Base Voltage (V)0.55
Maximum Collector Base Voltage (V)10
Maximum Transition Frequency (MHz)70(Typ)
Maximum Operating Temperature (°C)150
Maximum Power 1dB Compression (dBm)9(Typ)
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)2.8
Maximum Collector Cut-Off Current (nA)100
Maximum DC Collector Current Range (A)0.001 to 0.06
Maximum 3rd Order Intercept Point (dBm)19(Typ)
Maximum Collector-Emitter Voltage Range (V)<20
Description
Trans RF BJT NPN 2.8V 0.04A 136mW 4-Pin(3+Tab) DFP T/R
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