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BLT70,115
BLT70,115
RF BJT BLT70,115
NXP
BLT70,115
--
Diodes, Transistors and Thyristors
RF BJT
BLT70,115.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
ConfigurationSingle Dual Emitter
Package Width3.7(Max)
Package Height1.7(Max)
Package Length6.7(Max)
Output Power (W)0.6
Supplier PackageSC-73
Standard Package NameSC
Minimum DC Current Gain25@100mA@4.8V
Typical Power Gain (dB)8.1
Number of Elements per Chip1
Minimum DC Current Gain Range2 to 30
Maximum Power Dissipation (mW)2100
Maximum DC Collector Current (A)0.25
Maximum Emitter Base Voltage (V)2.5
Maximum Collector Base Voltage (V)16
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)8
Maximum DC Collector Current Range (A)0.12 to 0.5
Maximum Collector-Emitter Voltage Range (V)<20
Description
Trans RF BJT NPN 8V 0.25A 2100mW 4-Pin(3+Tab) SC-73 T/R
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