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MMBT5179
MMBT5179
RF BJT MMBT5179
onsemi
MMBT5179
--
Diodes, Transistors and Thyristors
RF BJT
MMBT5179.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width1.3
Package Height0.94
Package Length2.9
Output Power (W)0.02(Min)
Supplier PackageSOT-23
Standard Package NameSOT
Minimum DC Current Gain25@3mA@1V
Typical Power Gain (dB)15(Min)
Maximum Noise Figure (dB)5
Number of Elements per Chip1
Operational Bias Conditions6V/5mA
Minimum DC Current Gain Range2 to 30
Maximum Power Dissipation (mW)225
Maximum DC Collector Current (A)0.05
Maximum Emitter Base Voltage (V)2.5
Maximum Collector Base Voltage (V)20
Maximum Transition Frequency (MHz)2000
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)12
Maximum Collector Cut-Off Current (nA)20
Maximum DC Collector Current Range (A)0.001 to 0.06
Maximum Base Emitter Saturation Voltage (V)1@1mA@10mA
Maximum Collector-Emitter Voltage Range (V)<20
Maximum Junction Ambient Thermal Resistance556°C/W
Maximum Collector-Emitter Saturation Voltage (V)0.4@1mA@10mA
Description
Trans RF BJT NPN 12V 0.05A 3-Pin SOT-23 T/R
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