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KST10MTF
KST10MTF
RF BJT KST10MTF
onsemi
KST10MTF
--
Diodes, Transistors and Thyristors
RF BJT
KST10MTF.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width1.3
Package Height0.94
Package Length2.9
Supplier PackageSOT-23
Standard Package NameSOT
Minimum DC Current Gain60@4mA@10V
Number of Elements per Chip1
Minimum DC Current Gain Range50 to 120
Maximum Power Dissipation (mW)350
Typical Output Capacitance (pF)0.7(Max)
Maximum Emitter Base Voltage (V)3
Maximum Collector Base Voltage (V)30
Maximum Transition Frequency (MHz)650(Min)
Maximum Operating Temperature (°C)150
Maximum Emitter Cut-Off Current (nA)100
Maximum Collector-Emitter Voltage (V)25
Maximum Collector Cut-Off Current (nA)100
Maximum Collector-Emitter Voltage Range (V)30 to 40
Maximum Junction Ambient Thermal Resistance357°C/W
Maximum Collector-Emitter Saturation Voltage (V)0.5@0.4mA@4mA
Description
Trans RF BJT NPN 25V 350mW 3-Pin SOT-23 T/R
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