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BFR193E6327T
BFR193E6327T
RF BJT BFR193E6327T
Infineon
BFR193E6327T
--
Diodes, Transistors and Thyristors
RF BJT
BFR193E6327T.pdf
Specification
Product AttributeAttribute Value
TypeNPN
EU RoHSCompliant
MaterialSi
ECCN (US)EAR99
PackagingTape and Reel
Part StatusUnconfirmed
ConfigurationSingle
Minimum DC Current Gain70@30mA@8V
Typical Power Gain (dB)15
Maximum Noise Figure (dB)1.6(Typ)
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Operational Bias Conditions8V/30mA
Minimum DC Current Gain Range50 to 120
Maximum Power Dissipation (mW)580
Typical Input Capacitance (pF)2.25
Typical Output Capacitance (pF)0.66
Maximum DC Collector Current (A)0.08
Maximum Emitter Base Voltage (V)2
Maximum Collector Base Voltage (V)20
Maximum Transition Frequency (MHz)8000(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Emitter Cut-Off Current (nA)1000
Maximum Collector-Emitter Voltage (V)12
Maximum Collector Cut-Off Current (nA)100
Maximum DC Collector Current Range (A)0.06 to 0.12
Maximum Collector-Emitter Voltage Range (V)<20
Description
Trans RF BJT NPN 12V 0.08A 580mW Automotive 3-Pin SOT-23 T/R
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