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RF FETs 2SK1067-4-TL-E
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2SK1067-4-TL-E
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Diodes, Transistors and Thyristors
RF FETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541497080 |
| PPAP | No |
| EU RoHS | Compliant |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Pin Count | 3 |
| Automotive | No |
| PCB changed | 3 |
| Part Status | Obsolete |
| Channel Mode | Depletion |
| Channel Type | N |
| Configuration | Single |
| Package Width | 1.25 |
| Package Height | 0.9 |
| Package Length | 2 |
| Supplier Package | Case MCP |
| Maximum IDSS (uA) | 12000 |
| Typical Power Gain (dB) | 27 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 150 |
| Maximum Gate Source Voltage (V) | ±5 |
| Maximum Drain Source Voltage (V) | 16 |
| Maximum Operating Temperature (°C) | 125 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.03 |
| Typical Forward Transconductance (S) | 0.011 |
| Typical Input Capacitance @ Vds (pF) | 2.3@10V |
| Maximum Gate Source Leakage Current (nA) | 10 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 0.035@10V |
| Description |
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