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RF FETs RF3L05150CB4
STMicroelectronics
RF3L05150CB4
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Diodes, Transistors and Thyristors
RF FETs
RF3L05150CB4.pdf
Specification
Product AttributeAttribute Value
PPAPNo
MountingScrew
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
AutomotiveNo
PCB changed5
Part StatusActive
Channel ModeEnhancement
ConfigurationSingle Dual Drain Dual Gate
Package Width5.85
Package Height2.1
Package Length28.95
Output Power (W)150
Supplier PackageLBB
Maximum Frequency (MHz)1000
Typical Power Gain (dB)23
Number of Elements per Chip1
Typical Drain Efficiency (%)60
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)90
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)2.5
Typical Input Capacitance @ Vds (pF)70@28V
Maximum Drain Source Resistance (MOhm)1000@10V
Description
Trans RF FET 90V 2.5A 5-Pin LBB T/R
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