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MRF372
MRF372
RF FETs MRF372
NXP
MRF372
--
Diodes, Transistors and Thyristors
RF FETs
MRF372.pdf
Specification
Product AttributeAttribute Value
PPAPYes
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
Pin Count5
AutomotiveYes
PCB changed5
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR3
Package Width10.31(Max)
Package Height5.69(Max)
Package Length34.16(Max)
Output Power (W)180(Typ)
Supplier PackageNI-860C3
Mode of Operation2-Tone
Maximum Frequency (MHz)860
Minimum Frequency (MHz)470
Typical Power Gain (dB)17
Typical Drain Efficiency (%)37
Maximum Power Dissipation (mW)350000
Maximum Gate Source Voltage (V)15
Maximum Drain Source Voltage (V)68
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)17
Typical Forward Transconductance (S)2.6
Typical Input Capacitance @ Vds (pF)260@32V
Typical Output Capacitance @ Vds (pF)69@32V
Typical Reverse Transfer Capacitance @ Vds (pF)2.5@32V
Description
Trans RF MOSFET N-CH 68V 17A Automotive 5-Pin NI-860C3
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