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A2T27S007NT1
A2T27S007NT1
RF FETs A2T27S007NT1
NXP
A2T27S007NT1
--
Diodes, Transistors and Thyristors
RF FETs
A2T27S007NT1.pdf
Specification
Product AttributeAttribute Value
HTS8542.33.00.01
PPAPNo
TypeMOSFET
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count16
AutomotiveNo
PCB changed16
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
Package Width4
Package Height0.95(Max)
Package Length4
Supplier PackageHVSON EP
Mode of Operation1-Carrier W-CDMA
Process TechnologyLDMOS
Maximum Frequency (MHz)2700
Minimum Frequency (MHz)400
Typical Power Gain (dB)18.9
Typical Drain Efficiency (%)19.6
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)65
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Description
Trans RF MOSFET N-CH 65V 16-Pin HVSON EP T/R
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