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AFM906NT1
AFM906NT1
RF FETs AFM906NT1
NXP
AFM906NT1
--
Diodes, Transistors and Thyristors
RF FETs
AFM906NT1.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)5A991g.
Pin Count16
AutomotiveNo
PCB changed16
Part StatusActive
Channel ModeEnhancement
Channel TypeN
Maximum VSWR65
Package Width4
Package Height0.95(Max)
Package Length6
Output Power (W)6.8(Typ)
Supplier PackageDFN EP
Maximum IDSS (uA)2
Mode of OperationCW
Process TechnologyLDMOS
Maximum Frequency (MHz)941
Minimum Frequency (MHz)136
Typical Power Gain (dB)20.3
Typical Drain Efficiency (%)70.8
Maximum Power Dissipation (mW)65800
Maximum Gate Source Voltage (V)12
Maximum Drain Source Voltage (V)30
Maximum Gate Threshold Voltage (V)2.6
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Typical Forward Transconductance (S)4.4
Typical Input Capacitance @ Vds (pF)68.9@7.5V
Typical Output Capacitance @ Vds (pF)39.8@7.5V
Maximum Gate Source Leakage Current (nA)500
Description
Trans RF MOSFET N-CH 30V 16-Pin DFN EP T/R
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