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AFT09MS007NT1
AFT09MS007NT1
RF FETs AFT09MS007NT1
NXP
AFT09MS007NT1
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
Maximum VSWR65
ConfigurationSingle
Package Width5.97(Max)
Package Height1.83(Max)
Package Length6.73(Max)
Output Power (W)7.3(Typ)
Supplier PackagePLD-1.5W
Maximum IDSS (uA)10
Mode of OperationCW
Process TechnologyLDMOS
SVHC Exceeds ThresholdYes
Maximum Frequency (MHz)941
Minimum Frequency (MHz)136
Typical Power Gain (dB)15.6(Max)
Number of Elements per Chip1
Typical Drain Efficiency (%)71
Maximum Power Dissipation (mW)182000
Maximum Gate Source Voltage (V)12
Maximum Drain Source Voltage (V)30
Maximum Gate Threshold Voltage (V)2.6
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Typical Forward Transconductance (S)9.8
Typical Input Capacitance @ Vds (pF)107@7.5V
Typical Output Capacitance @ Vds (pF)56@7.5V
Maximum Gate Source Leakage Current (nA)1
Typical Reverse Transfer Capacitance @ Vds (pF)2.7@7.5V
Description
Trans RF FET N-CH 30V 3-Pin PLD-1.5W T/R
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