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RF FETs BLC8G20LS-400AVZ
NXP
BLC8G20LS-400AVZ
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Diodes, Transistors and Thyristors
RF FETs
Specification
| Product Attribute | Attribute Value |
| PPAP | Unknown |
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Packaging | Tray |
| Automotive | Unknown |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum VSWR | 10 |
| Configuration | Dual Common Source |
| Output Power (W) | 475(Typ) |
| Maximum IDSS (uA) | 2.8 |
| Mode of Operation | 1-Carrier W-CDMA |
| Process Technology | LDMOS |
| Maximum Frequency (MHz) | 2000 |
| Minimum Frequency (MHz) | 1800 |
| Typical Power Gain (dB) | 15.5 |
| Number of Elements per Chip | 2 |
| Typical Drain Efficiency (%) | 44 |
| Maximum Gate Source Voltage (V) | 13 |
| Maximum Drain Source Voltage (V) | 65 |
| Maximum Gate Threshold Voltage (V) | 2.3 |
| Maximum Operating Temperature (°C) | 225 |
| Minimum Operating Temperature (°C) | -65 |
| Typical Forward Transconductance (S) | 19 |
| Maximum Drain Source Resistance (mOhm) | 135@6.05V |
| Maximum Gate Source Leakage Current (nA) | 280 |
| Description |
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