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AFT26H200W03SR6
AFT26H200W03SR6
RF FETs AFT26H200W03SR6
NXP
AFT26H200W03SR6
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
AutomotiveNo
PCB changed5
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
Package Width10.29(Max)
Package Height4.83(Max)
Package Length32.39(Max)
Output Power (W)45(Typ)
Supplier PackageNI-1230S
Maximum IDSS (uA)10
Mode of Operation1-Carrier W-CDMA
Process TechnologyLDMOS
Maximum Frequency (MHz)2690
Minimum Frequency (MHz)2496
Typical Power Gain (dB)14.1
Typical Drain Efficiency (%)45.2
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)65
Maximum Gate Threshold Voltage (V)1.6
Maximum Operating Temperature (°C)225
Minimum Operating Temperature (°C)-40
Maximum Gate Source Leakage Current (nA)1000
Description
Trans RF MOSFET N-CH 65V 5-Pin NI-1230S T/R
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