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BLF647P
BLF647P
RF FETs BLF647P
NXP
BLF647P
--
Diodes, Transistors and Thyristors
RF FETs
BLF647P.pdf
Specification
Product AttributeAttribute Value
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
Pin Count5
PCB changed5
Part StatusActive
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationDual Common Source
Package Width9.91(Max)
Package Height4.75(Max)
Package Length34.16(Max)
Output Power (W)200
Supplier PackageCDFM
Maximum IDSS (uA)1.4
Mode of OperationPulsed RF|Class-AB|CW Class-B|2-Tone Class-AB
Process TechnologyLDMOS
Maximum Frequency (MHz)1500
Minimum Frequency (MHz)10
Typical Power Gain (dB)18
Number of Elements per Chip2
Typical Drain Efficiency (%)70
Maximum Gate Source Voltage (V)11
Maximum Drain Source Voltage (V)65
Maximum Gate Threshold Voltage (V)2.4
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Typical Input Capacitance @ Vds (pF)78@32V
Typical Output Capacitance @ Vds (pF)30@32V
Maximum Drain Source Resistance (mOhm)140(Typ)@6.15V
Maximum Gate Source Leakage Current (nA)50
Typical Reverse Transfer Capacitance @ Vds (pF)1.3@32V
Description
Trans RF MOSFET N-CH 65V 5-Pin CDFM
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