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MRF1535NT1
MRF1535NT1
RF FETs MRF1535NT1
NXP
MRF1535NT1
--
Diodes, Transistors and Thyristors
RF FETs
MRF1535NT1.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTape and Reel
Pin Count7
AutomotiveNo
Lead ShapeJ-Lead
PCB changed7
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR20
ConfigurationSingle Quad Source
Package Width6.4(Max)
Package Height2.64(Max)
Package Length23.67(Max)
Output Power (W)35(Typ)
Supplier PackageTO-272 WARP
Process TechnologyLDMS
Standard Package NameTO-272 WARP
SVHC Exceeds ThresholdYes
Maximum Frequency (MHz)520
Minimum Frequency (MHz)135
Typical Power Gain (dB)13.5
Number of Elements per Chip1
Typical Drain Efficiency (%)50(Min)
Maximum Power Dissipation (mW)135000
Maximum Gate Source Voltage (V)±20
Maximum Drain Source Voltage (V)40
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)6
Typical Input Capacitance @ Vds (pF)250(Max)@12.5V
Typical Output Capacitance @ Vds (pF)150(Max)@12.5V
Maximum Drain Source Resistance (mOhm)700@5V
Typical Reverse Transfer Capacitance @ Vds (pF)20(Max)@12.5V
Description
Trans RF FET N-CH 40V 6A 7-Pin TO-272 WARP T/R
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