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BF1101WR
BF1101WR
RF FETs BF1101WR
NXP
BF1101WR
--
Diodes, Transistors and Thyristors
RF FETs
BF1101WR.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count4
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Dual Gate
Package Width1.35(Max)
Package Height1(Max)
Package Length2.2(Max)
Supplier PackageCMPAK
Standard Package NameCMPAK
Maximum Frequency (MHz)1000
Number of Elements per Chip1
Maximum Power Dissipation (mW)200
Maximum Gate Source Voltage (V)7
Maximum Drain Source Voltage (V)7
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)0.03
Typical Input Capacitance @ Vds (pF)1.6@5V@Gate 2|2.2@5V@Gate 1
Typical Output Capacitance @ Vds (pF)1.2@5V
Typical Reverse Transfer Capacitance @ Vds (pF)0.025@5V
Description
Trans RF MOSFET N-CH 7V 0.03A 4-Pin(3+Tab) CMPAK
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