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LET9060F
LET9060F
RF FETs LET9060F
STMicroelectronics
LET9060F
--
Diodes, Transistors and Thyristors
RF FETs
LET9060F.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingLoose
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR20(Typ)
ConfigurationSingle
Package Width6.09(Max)
Package Height3.94(Max)
Package Length9.91(Max)
Output Power (W)75(Typ)
Supplier PackageCase M-250
Process TechnologyLDMOS
Maximum Frequency (MHz)1000
Typical Power Gain (dB)18
Supplier Temperature GradeIndustrial
Number of Elements per Chip1
Typical Drain Efficiency (%)70
Maximum Power Dissipation (mW)130000
Maximum Gate Source Voltage (V)15
Maximum Drain Source Voltage (V)80
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)12
Typical Forward Transconductance (S)2.5(Min)
Typical Input Capacitance @ Vds (pF)77@28V
Typical Output Capacitance @ Vds (pF)39@28V
Typical Reverse Transfer Capacitance @ Vds (pF)1.2@28V
Description
Trans RF MOSFET N-CH 80V 12A 3-Pin Case M-250 Loose
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