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BF1109WR,115
BF1109WR,115
RF FETs BF1109WR,115
NXP
BF1109WR,115
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Diodes, Transistors and Thyristors
RF FETs
BF1109WR,115.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Dual Gate
Package Width1.35(Max)
Package Height1(Max)
Package Length2.2(Max)
Supplier PackageCMPAK
Standard Package NameCMPAK
Maximum Frequency (MHz)1000
Typical Power Gain (dB)38
Number of Elements per Chip1
Maximum Power Dissipation (mW)200
Maximum Gate Source Voltage (V)11
Maximum Drain Source Voltage (V)11
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)0.03
Typical Input Capacitance @ Vds (pF)2.2@9V@Gate 1|1.5@9V@Gate 2
Typical Output Capacitance @ Vds (pF)1.3@9V
Typical Reverse Transfer Capacitance @ Vds (pF)0.025@9V
Description
Trans RF MOSFET N-CH 11V 0.03A 4-Pin(3+Tab) CMPAK T/R
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