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MMRF1304NR1
MMRF1304NR1
RF FETs MMRF1304NR1
NXP
MMRF1304NR1
--
Diodes, Transistors and Thyristors
RF FETs
MMRF1304NR1.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed3
Part StatusNRND
Channel ModeEnhancement
Channel TypeN
Maximum VSWR65
ConfigurationSingle
Package Width6.15(Max)
Package Height2.08(Max)
Package Length9.7(Max)
Output Power (W)25(Typ)
Supplier PackageTO-270
Maximum IDSS (uA)7
Mode of OperationPulse
Process TechnologyLDMOS
Maximum Frequency (MHz)2000
Minimum Frequency (MHz)1.8
Typical Power Gain (dB)25.4
Number of Elements per Chip1
Typical Drain Efficiency (%)74.5
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)133
Maximum Gate Threshold Voltage (V)2.5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Typical Input Capacitance @ Vds (pF)39.2@50V
Typical Output Capacitance @ Vds (pF)14.2@50V
Maximum Gate Source Leakage Current (nA)400
Typical Reverse Transfer Capacitance @ Vds (pF)0.26@50V
Description
Trans RF FET N-CH 133V 3-Pin TO-270 T/R
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