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MW6S010NR1
MW6S010NR1
RF FETs MW6S010NR1
NXP
MW6S010NR1
--
Diodes, Transistors and Thyristors
RF FETs
MW6S010NR1.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeFlat
PCB changed3
Part StatusNRND
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationSingle
Package Width6.15(Max)
Package Height2.08(Max)
Package Length9.7(Max)
Output Power (W)10(Typ)
Supplier PackageTO-270
Mode of Operation2-Tone
Process TechnologyLDMOS
Standard Package NameTO-270
SVHC Exceeds ThresholdYes
Maximum Frequency (MHz)1500
Minimum Frequency (MHz)450
Typical Power Gain (dB)20
Number of Elements per Chip1
Typical Drain Efficiency (%)33
Maximum Power Dissipation (mW)61400
Maximum Gate Source Voltage (V)12
Maximum Drain Source Voltage (V)68
Maximum Operating Temperature (°C)225
Minimum Operating Temperature (°C)-65
Typical Output Capacitance @ Vds (pF)10@28V
Typical Reverse Transfer Capacitance @ Vds (pF)0.32@28V
Description
Trans RF MOSFET N-CH 68V 3-Pin TO-270 T/R
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