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BF992,215
BF992,215
RF FETs BF992,215
NXP
BF992,215
--
Diodes, Transistors and Thyristors
RF FETs
BF992,215.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
Channel ModeDepletion
Channel TypeN
ConfigurationSingle Dual Gate
Package Width1.4(Max)
Package Height1(Max)
Package Length3(Max)
Supplier PackageSOT-143B
Number of Elements per Chip1
Maximum Power Dissipation (mW)200
Maximum Gate Source Voltage (V)±8
Maximum Drain Source Voltage (V)20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)0.04
Typical Input Capacitance @ Vds (pF)4@10V@Gate 1|1.7@10V@Gate 2
Typical Output Capacitance @ Vds (pF)2@10V
Maximum Gate Source Leakage Current (nA)25
Typical Reverse Transfer Capacitance @ Vds (pF)0.03@10V
Description
Trans RF FET N-CH 20V 0.04A 4-Pin(3+Tab) SOT-143B T/R
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