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RF FETs PTFA142401ELV4XWSA1
Infineon
PTFA142401ELV4XWSA1
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Diodes, Transistors and Thyristors
RF FETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Screw |
| ECCN (US) | EAR99 |
| Packaging | Tray |
| Pin Count | 3 |
| Automotive | No |
| PCB changed | 3 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum VSWR | 10 |
| Configuration | Single |
| Package Width | 9.78 |
| Package Height | 3.96 |
| Package Length | 34.04 |
| Output Power (W) | 200 |
| Supplier Package | Case 33288 |
| Mode of Operation | DVB-T|CW|2-Tone |
| Process Technology | LDMOS |
| Maximum Frequency (MHz) | 1500 |
| Minimum Frequency (MHz) | 1450 |
| Typical Power Gain (dB) | 16.5 |
| Number of Elements per Chip | 1 |
| Typical Drain Efficiency (%) | 43 |
| Maximum Power Dissipation (mW) | 625000 |
| Maximum Gate Source Voltage (V) | 12 |
| Maximum Drain Source Voltage (V) | 65 |
| Maximum Operating Temperature (°C) | 200 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Drain Source Resistance (mOhm) | 50(Typ)@10V |
| Description |
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