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SD2918
SD2918
RF FETs SD2918
STMicroelectronics
SD2918
--
Diodes, Transistors and Thyristors
RF FETs
SD2918.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingLoose
Pin Count4
AutomotiveNo
PCB changed4
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR30(Min)
ConfigurationSingle Dual Source
Package Width6.48(Max)
Package Height7.11(Max)
Package Length24.89(Max)
Output Power (W)30(Min)
Supplier PackageCase M-113
Maximum Frequency (MHz)200
Typical Power Gain (dB)22
Number of Elements per Chip1
Typical Drain Efficiency (%)55
Maximum Power Dissipation (mW)175000
Maximum Gate Source Voltage (V)±20
Maximum Drain Source Voltage (V)125
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)6
Typical Forward Transconductance (S)0.8(Min)
Typical Input Capacitance @ Vds (pF)58@50V
Typical Output Capacitance @ Vds (pF)35.5@50V
Typical Reverse Transfer Capacitance @ Vds (pF)7.5@50V
Description
Trans RF MOSFET N-CH 125V 6A 4-Pin Case M-113 Loose
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