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BLF2425M9LS140
BLF2425M9LS140
RF FETs BLF2425M9LS140
NXP
BLF2425M9LS140
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
EU RoHSCompliant
ECCN (US)EAR99
Part StatusActive
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationSingle
Output Power (W)140
Maximum IDSS (uA)4.2
Mode of OperationCW
Process TechnologyLDMOS
Maximum Frequency (MHz)2500
Minimum Frequency (MHz)2400
Typical Power Gain (dB)19
Number of Elements per Chip1
Typical Drain Efficiency (%)58
Maximum Gate Source Voltage (V)13
Maximum Drain Source Voltage (V)65
Maximum Gate Threshold Voltage (V)3.1
Maximum Operating Temperature (°C)225
Minimum Operating Temperature (°C)-65
Typical Forward Transconductance (S)13
Maximum Drain Source Resistance (mOhm)69(Typ)@6.85V
Maximum Gate Source Leakage Current (nA)420
Description
Trans RF MOSFET N-CH 65V
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