Product Attribute | Attribute Value |
EU RoHS | Compliant |
ECCN (US) | EAR99 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Maximum VSWR | 10 |
Configuration | Single |
Output Power (W) | 140 |
Maximum IDSS (uA) | 4.2 |
Mode of Operation | CW |
Process Technology | LDMOS |
Maximum Frequency (MHz) | 2500 |
Minimum Frequency (MHz) | 2400 |
Typical Power Gain (dB) | 19 |
Number of Elements per Chip | 1 |
Typical Drain Efficiency (%) | 58 |
Maximum Gate Source Voltage (V) | 13 |
Maximum Drain Source Voltage (V) | 65 |
Maximum Gate Threshold Voltage (V) | 3.1 |
Maximum Operating Temperature (°C) | 225 |
Minimum Operating Temperature (°C) | -65 |
Typical Forward Transconductance (S) | 13 |
Maximum Drain Source Resistance (mOhm) | 69(Typ)@6.85V |
Maximum Gate Source Leakage Current (nA) | 420 |
Description |