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BLF578XR
BLF578XR
RF FETs BLF578XR
NXP
BLF578XR
--
Diodes, Transistors and Thyristors
RF FETs
BLF578XR.pdf
Specification
Product AttributeAttribute Value
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
Pin Count5
PCB changed5
Part StatusNRND
Channel ModeEnhancement
Channel TypeN
ConfigurationDual Common Source
Package Width10.29(Max)
Package Height4.7(Max)
Package Length41.28(Max)
Output Power (W)1400
Supplier PackageSOT-539A
Mode of OperationPulsed RF
Process TechnologyLDMOS
Maximum Frequency (MHz)500
Minimum Frequency (MHz)10
Typical Power Gain (dB)23.5
Number of Elements per Chip2
Typical Drain Efficiency (%)69
Maximum Gate Source Voltage (V)11
Maximum Drain Source Voltage (V)110
Maximum Operating Temperature (°C)225
Minimum Operating Temperature (°C)-65
Maximum Drain Source Resistance (MOhm)70(Typ)@6V
Description
Trans RF FET N-CH 110V 5-Pin SOT-539A
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