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RF FETs BG3123H6327XTSA1
Infineon
BG3123H6327XTSA1
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Diodes, Transistors and Thyristors
RF FETs
Specification
| Product Attribute | Attribute Value |
| PPAP | Unknown |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| PCB changed | 6 |
| Part Status | Obsolete |
| Channel Mode | Depletion |
| Channel Type | N |
| Configuration | Dual |
| Package Width | 1.25 |
| Package Height | 0.9(Max) |
| Package Length | 2 |
| Supplier Package | SOT-363 |
| Standard Package Name | SOT-26 |
| Typical Power Gain (dB) | 30@Amp B|32@Amp A |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 200 |
| Maximum Gate Source Voltage (V) | ±6 |
| Maximum Drain Source Voltage (V) | 8 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.025 |
| Typical Forward Transconductance (S) | 0.3 |
| Typical Input Capacitance @ Vds (pF) | 1.9@5V@Gate 1@Amp A|1.5@5V@Gate 1@Amp B |
| Description |
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