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BLP25M710Z
BLP25M710Z
RF FETs BLP25M710Z
NXP
BLP25M710Z
--
Diodes, Transistors and Thyristors
RF FETs
BLP25M710Z.pdf
Specification
Product AttributeAttribute Value
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count12
PCB changed12
Part StatusNRND
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationDual Common Source
Package Width4
Package Height0.82
Package Length6
Output Power (W)10
Supplier PackageHVSON EP
Maximum IDSS (uA)1.4
Mode of OperationDVB-T|Pulsed RF
Process TechnologyLDMOS
Maximum Frequency (MHz)2500
Minimum Frequency (MHz)10
Typical Power Gain (dB)16
Number of Elements per Chip2
Typical Drain Efficiency (%)23
Maximum Gate Source Voltage (V)13
Maximum Drain Source Voltage (V)65
Maximum Gate Threshold Voltage (V)2.3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Drain Source Resistance (mOhm)1000(Typ)@6.05V
Maximum Gate Source Leakage Current (nA)140
Description
Trans RF FET N-CH 65V 12-Pin HVSON EP T/R
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