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RF FETs BLS6G2933P-200,117
NXP
BLS6G2933P-200,117
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Diodes, Transistors and Thyristors
RF FETs
Specification
| Product Attribute | Attribute Value |
| PPAP | Unknown |
| Mounting | Screw |
| ECCN (US) | 3A001.b.3.a.3 |
| Packaging | Tray |
| Pin Count | 6 |
| Automotive | Unknown |
| PCB changed | 6 |
| Part Status | Unconfirmed |
| Maximum VSWR | 5 |
| Package Width | 35.8 |
| Package Height | 4.7 |
| Package Length | 50.8 |
| Output Power (W) | 220(Typ) |
| Maximum IDSS (uA) | 10 |
| Mode of Operation | Class AB |
| Process Technology | LDMOS |
| Maximum Frequency (MHz) | 3300 |
| Minimum Frequency (MHz) | 2900 |
| Typical Power Gain (dB) | 11 |
| Typical Drain Efficiency (%) | 45 |
| Maximum Gate Source Voltage (V) | ±11 |
| Maximum Drain Source Voltage (V) | 60 |
| Maximum Gate Threshold Voltage (V) | 2.3 |
| Maximum Operating Temperature (°C) | 200 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Continuous Drain Current (A) | 66 |
| Typical Forward Transconductance (S) | 13 |
| Maximum Gate Source Leakage Current (nA) | 900 |
| Description |
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