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RF FETs MRF6S20010GNR1
NXP
MRF6S20010GNR1
--
Diodes, Transistors and Thyristors
RF FETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 3 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum VSWR | 5 |
| Configuration | Single |
| Package Width | 5.97(Max) |
| Package Height | 2.08(Max) |
| Package Length | 9.7(Max) |
| Output Power (W) | 1(Typ) |
| Supplier Package | TO-270 GULL |
| Mode of Operation | 1-Carrier N-CDMA|2-Carrier W-CDMA|2-Tone|GSM EDGE|IS-95 |
| Process Technology | LDMOS |
| Standard Package Name | TO-270 GULL |
| SVHC Exceeds Threshold | Yes |
| Maximum Frequency (MHz) | 2200 |
| Minimum Frequency (MHz) | 1600 |
| Typical Power Gain (dB) | 15.5 |
| Number of Elements per Chip | 1 |
| Typical Drain Efficiency (%) | 36 |
| Maximum Gate Source Voltage (V) | 12 |
| Maximum Drain Source Voltage (V) | 68 |
| Maximum Operating Temperature (°C) | 225 |
| Minimum Operating Temperature (°C) | -65 |
| Typical Input Capacitance @ Vds (pF) | 0.12@28V |
| Typical Output Capacitance @ Vds (pF) | 20@28V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 11.6@28V |
| Description |
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