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RF FETs BLS7G3135LS-200
NXP
BLS7G3135LS-200
--
Diodes, Transistors and Thyristors
RF FETs
Specification
| Product Attribute | Attribute Value |
| PPAP | Unknown |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Pin Count | 3 |
| Automotive | Unknown |
| PCB changed | 3 |
| Part Status | NRND |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 9.91(Max) |
| Package Height | 4.72(Max) |
| Package Length | 20.7(Max) |
| Output Power (W) | 200(Typ) |
| Supplier Package | SOT-502B |
| Mode of Operation | Pulsed RF |
| Process Technology | LDMOS |
| Maximum Frequency (MHz) | 3500 |
| Minimum Frequency (MHz) | 3100 |
| Typical Power Gain (dB) | 12 |
| Number of Elements per Chip | 1 |
| Typical Drain Efficiency (%) | 43 |
| Maximum Gate Source Voltage (V) | 13 |
| Maximum Drain Source Voltage (V) | 65 |
| Maximum Operating Temperature (°C) | 225 |
| Minimum Operating Temperature (°C) | -65 |
| Description |
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