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BLF2043,112
BLF2043,112
RF FETs BLF2043,112
NXP
BLF2043,112
--
Diodes, Transistors and Thyristors
RF FETs
BLF2043,112.pdf
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSSupplier Unconfirmed
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveUnknown
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationSingle
Package Width4.14(Max)
Package Height2.95(Max)
Package Length5.16(Max)
Output Power (W)10
Supplier PackageCDIP SMD
Mode of Operation2-Tone Class-AB|CW Class-AB
Process TechnologyLDMOS
Maximum Frequency (MHz)2200
Minimum Frequency (MHz)30
Typical Power Gain (dB)11.8(Min)
Number of Elements per Chip1
Typical Drain Efficiency (%)33(Min)
Maximum Gate Source Voltage (V)±15
Maximum Drain Source Voltage (V)75
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)2.2
Typical Forward Transconductance (S)0.5
Typical Input Capacitance @ Vds (pF)11@26V
Typical Output Capacitance @ Vds (pF)9@26V
Maximum Drain Source Resistance (mOhm)1200(Typ)@10V
Typical Reverse Transfer Capacitance @ Vds (pF)0.5@26V
Description
Trans RF FET N-CH 75V 2.2A 3-Pin CDIP SMD Bulk
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