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MRFX600HSR5
MRFX600HSR5
RF FETs MRFX600HSR5
NXP
MRFX600HSR5
--
Diodes, Transistors and Thyristors
RF FETs
MRFX600HSR5.pdf
Specification
Product AttributeAttribute Value
TypeMOSFET
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
PCB changed5
Part StatusActive
Channel ModeEnhancement
Channel TypeN
Maximum VSWR65
ConfigurationDual Common Source
Package Width9.91(Max)
Package Height4.32(Max)
Package Length20.7(Max)
Output Power (W)680(Typ)
Supplier PackageNI-780S
Mode of OperationPulsed CW
Process TechnologyLDMOS
Maximum Frequency (MHz)400
Minimum Frequency (MHz)1.8
Typical Power Gain (dB)26.4
Number of Elements per Chip2
Typical Drain Efficiency (%)74.4
Maximum Power Dissipation (mW)1333000
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)179
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Typical Forward Transconductance (S)33.6
Typical Input Capacitance @ Vds (pF)299@65V
Typical Output Capacitance @ Vds (pF)84@65V
Typical Reverse Transfer Capacitance @ Vds (pF)1.1@65V
Description
Trans RF FET N-CH 179V 5-Pin NI-780S T/R
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