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RF FETs BLP8G10S-45PGY
NXP
BLP8G10S-45PGY
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Diodes, Transistors and Thyristors
RF FETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8542.33.00.01 |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 4 |
| PCB changed | 4 |
| Part Status | LTB |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum VSWR | 10 |
| Configuration | Dual Common Source |
| Package Width | 9.96 |
| Package Height | 3.9(Max) |
| Package Length | 20.57 |
| Output Power (W) | 2.5(Typ) |
| Supplier Package | HSOP EP |
| Maximum IDSS (uA) | 1.4 |
| Mode of Operation | 2-Carrier W-CDMA |
| Process Technology | LDMOS |
| Maximum Frequency (MHz) | 1000 |
| Minimum Frequency (MHz) | 700 |
| Typical Power Gain (dB) | 20.8 |
| Number of Elements per Chip | 2 |
| Typical Drain Efficiency (%) | 19.8 |
| Maximum Gate Source Voltage (V) | 13 |
| Maximum Drain Source Voltage (V) | 65 |
| Maximum Gate Threshold Voltage (V) | 2.3 |
| Maximum Operating Temperature (°C) | 225 |
| Minimum Operating Temperature (°C) | -65 |
| Typical Forward Transconductance (S) | 3 |
| Maximum Drain Source Resistance (mOhm) | 500(Typ)@6.05V |
| Maximum Gate Source Leakage Current (nA) | 140 |
| Description |
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