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MMRF1014NT1
MMRF1014NT1
RF FETs MMRF1014NT1
NXP
MMRF1014NT1
--
Diodes, Transistors and Thyristors
RF FETs
MMRF1014NT1.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
ECCN (US)EAR99
Pin Count4
AutomotiveNo
Part StatusActive
Channel ModeEnhancement
Channel TypeN
Maximum VSWR5
Output Power (W)4(Typ)
Maximum IDSS (uA)10
Mode of Operation2-Tone
Process TechnologyLDMOS
SVHC Exceeds ThresholdYes
Maximum Frequency (MHz)2000
Minimum Frequency (MHz)1
Typical Power Gain (dB)19
Typical Drain Efficiency (%)33
Maximum Gate Source Voltage (V)12
Maximum Drain Source Voltage (V)68
Maximum Gate Threshold Voltage (V)2.7
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Typical Input Capacitance @ Vds (pF)30@28V
Typical Output Capacitance @ Vds (pF)25@28V
Maximum Gate Source Leakage Current (nA)500
Typical Reverse Transfer Capacitance @ Vds (pF)21@28V
Description
Trans RF FET N-CH 68V 4-Pin T/R
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