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PD84002
PD84002
RF FETs PD84002
STMicroelectronics
PD84002
--
Diodes, Transistors and Thyristors
RF FETs
PD84002.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeFlat
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR20(Min)
ConfigurationSingle Dual Source
Package Width2.6(Max)
Package Height1.6(Max)
Package Length4.6(Max)
Output Power (W)2(Min)
Supplier PackageSOT-89
Process TechnologyLDMOS
Standard Package NameSOT-89
Maximum Frequency (MHz)1000
Typical Power Gain (dB)15
Number of Elements per Chip1
Typical Drain Efficiency (%)65
Maximum Power Dissipation (mW)6000
Maximum Gate Source Voltage (V)15
Maximum Drain Source Voltage (V)25
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)2
Typical Input Capacitance @ Vds (pF)16@7.5V
Typical Output Capacitance @ Vds (pF)16@7.5V
Typical Reverse Transfer Capacitance @ Vds (pF)1.2@7.5V
Description
Trans RF FET N-CH 25V 2A 4-Pin(3+Tab) SOT-89 T/R
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