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MMRF1021NT1
MMRF1021NT1
RF FETs MMRF1021NT1
NXP
MMRF1021NT1
--
Diodes, Transistors and Thyristors
RF FETs
MMRF1021NT1.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
TypeMOSFET
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR65
Package Width5.97(Max)
Package Height1.83(Max)
Package Length6.73(Max)
Output Power (W)7.3(Typ)
Supplier PackagePLD-1.5W
Mode of OperationCW
Process TechnologyLDMOS
SVHC Exceeds ThresholdYes
Maximum Frequency (MHz)941
Minimum Frequency (MHz)136
Typical Power Gain (dB)15.6
Typical Drain Efficiency (%)71
Maximum Power Dissipation (mW)114000
Maximum Gate Source Voltage (V)12
Maximum Drain Source Voltage (V)30
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Typical Forward Transconductance (S)9.8
Typical Input Capacitance @ Vds (pF)107@7.5V
Typical Output Capacitance @ Vds (pF)56@7.5V
Typical Reverse Transfer Capacitance @ Vds (pF)2.7@7.5V
Description
Trans RF FET N-CH 30V 3-Pin PLD-1.5W T/R
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