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PTFB212503ELV1R250XTMA1
PTFB212503ELV1R250XTMA1
RF FETs PTFB212503ELV1R250XTMA1
Infineon
PTFB212503ELV1R250XTMA1
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveNo
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationSingle
Output Power (W)240
Mode of Operation2-Carrier W-CDMA|2-Tone
Process TechnologyLDMOS
Maximum Frequency (MHz)2170
Minimum Frequency (MHz)2110
Typical Power Gain (dB)18
Number of Elements per Chip1
Typical Drain Efficiency (%)40
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)65
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-40
Maximum Drain Source Resistance (mOhm)50(Typ)@10V
Description
Trans RF MOSFET N-CH 65V T/R
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