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MRF6VP11KGSR5
MRF6VP11KGSR5
RF FETs MRF6VP11KGSR5
NXP
MRF6VP11KGSR5
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.40
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
AutomotiveNo
Lead ShapeGull-wing
PCB changed5
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationSingle
Package Width10.29(Max)
Package Height5.08(Max)
Package Length32.39(Max)
Output Power (W)1000(Typ)
Supplier PackageNI-1230S
Maximum IDSS (uA)100
Mode of OperationPulse
Process TechnologyLDMOS
Maximum Frequency (MHz)150
Minimum Frequency (MHz)1.8
Typical Power Gain (dB)26
Number of Elements per Chip1
Typical Drain Efficiency (%)71
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)110
Maximum Gate Threshold Voltage (V)3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Typical Input Capacitance @ Vds (pF)506@50V
Typical Output Capacitance @ Vds (pF)147@50V
Maximum Gate Source Leakage Current (nA)10000
Typical Reverse Transfer Capacitance @ Vds (pF)3.3@50V
Description
Trans RF MOSFET N-CH 110V 5-Pin NI-1230S T/R
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