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MMRF5017HS-1GHZ
MMRF5017HS-1GHZ
RF FETs MMRF5017HS-1GHZ
NXP
MMRF5017HS-1GHZ
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MaterialGaN
ECCN (US)3B992
AutomotiveNo
Maximum VSWR10
ConfigurationSingle
Output Power (W)200(Typ)
Maximum Frequency (MHz)2200
Minimum Frequency (MHz)30
Typical Power Gain (dB)18.4
Number of Elements per Chip1
Typical Drain Efficiency (%)57
Maximum Power Dissipation (mW)154000
Maximum Gate Source Voltage (V)0
Maximum Drain Source Voltage (V)125
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Description
Trans RF FET 125V
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