Product Attribute | Attribute Value |
PPAP | No |
EU RoHS | Compliant |
Material | GaN |
ECCN (US) | 3B992 |
Automotive | No |
Maximum VSWR | 10 |
Configuration | Single |
Output Power (W) | 200(Typ) |
Maximum Frequency (MHz) | 2200 |
Minimum Frequency (MHz) | 30 |
Typical Power Gain (dB) | 18.4 |
Number of Elements per Chip | 1 |
Typical Drain Efficiency (%) | 57 |
Maximum Power Dissipation (mW) | 154000 |
Maximum Gate Source Voltage (V) | 0 |
Maximum Drain Source Voltage (V) | 125 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Description |