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MRF1511NT1
MRF1511NT1
RF FETs MRF1511NT1
NXP
MRF1511NT1
--
Diodes, Transistors and Thyristors
RF FETs
MRF1511NT1.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
PCB changed4
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR20
ConfigurationSingle
Package Width5.97(Max)
Package Height1.83(Max)
Package Length6.73(Max)
Output Power (W)8(Typ)
Supplier PackagePLD-1.5
Process TechnologyLDMOS
Standard Package NamePLD-1.5
SVHC Exceeds ThresholdYes
Maximum Frequency (MHz)175
Typical Power Gain (dB)13
Number of Elements per Chip1
Typical Drain Efficiency (%)70
Maximum Power Dissipation (mW)62500
Maximum Gate Source Voltage (V)±20
Maximum Drain Source Voltage (V)40
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)4
Typical Input Capacitance @ Vds (pF)100@7.5V
Typical Output Capacitance @ Vds (pF)53@7.5V
Typical Reverse Transfer Capacitance @ Vds (pF)8@7.5V
Description
Trans RF FET N-CH 40V 4A 4-Pin PLD-1.5 T/R
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